s5493-01 , etc. these are si photodiodes molded into clear plastic packages. spectral response characteristics for these si photodiodes can be selected to meet your application, from among the visible ran ge, visible to near ir range, and visible to infrared range. two active areas of 1.3 1.3 mm and 2.4 2.8 mm are also available. s5493-01 and s5627-01 provide a spectral response characteristic similar to the visible range sensitivity without using visual- compensated filters. features l s5493-01, s5627-01: visible range (filterless type) l s4797-01, S6931 : visible to near ir range l s2833-01, s4011-04: visible to infrared range applications l exposure meter l illuminometer l camera auto exposure l stroboscope light control l copier l display light control l optical switch photodiode si photodiode photodiodes molded into clear plastic packages 1 general ratings / absolute maximum ratings absolute maximum ratings active area size effective active area reverse voltage v r max. operating temperature topr storage temperature tstg type no. dimensional outline/ window material * (mm) (mm 2 ) (v) (c) (c) s5493-01 ? /r 2.4 2.8 6.6 s5627-01 ? /r 1.3 1.3 1.6 S6931 ? /r 2.4 2.8 6.6 s4797-01 ? /r 1.3 1.3 1.6 s2833-01 ? /r 2.4 2.8 6.6 s4011-04 ? /r 1.3 1.3 1.6 10 -25 to +85 -40 to +100 * window material r: clear resin coating electrical and optical characteristics (typ. ta=25 c, unless otherwise noted) photo sensitivity s (a/w) shunt resistance rsh v r =10 mv spectral response range peak sensitivity wavelength p p gap led he-ne laser infrared sensitivity ratio short circuit current isc 100 lx temp. coefficient of isc dark current i d v r =1 v max. temp. coefficient of i d t cid rise time tr v r =0 v r l =1 k ? terminal capacitance ct v r =0 v f=10 khz type no. (nm) (nm) 560 nm 633 nm (%) (a) (%/c) (pa) (times/ c) (s) (pf) min. (g ? ) typ. (g ? ) s5493-01 1.0 100 10 3000 0.1 1 s5627-01 320 to 840 540 0.3 0.28 0.2 35 0.25 0.25 50 1.13 2 700 0.5 5 S6931 0.48 0.4 0.45 4.2 0.5 200 s4797-01 320 to 1000 720 0.4 0.37 1.2 20 0.2 50 50 s2833-01 6.5 2.5 700 100 s4011-04 320 to 1100 960 0.58 0.33 0.38 - 1.9 0.1 10 1.12 0.5 200 10 250
si photodiode s5493-01, etc. 10 fa 100 fa 1 pa 10 pa 100 pa 1 na 0.01 0.1 1 10 reverse voltage (v) dark current (typ. ta=25 ?c) s4011-04 s4797-01 S6931 s2833-01 s5493-01 s5627-01 0 0.1 0.2 0.3 0.4 0.7 200 400 600 800 1000 wavelength (nm) photo sensitivity (a/w) (typ. ta=25 ? c) 0.5 0.6 s4797-01 s2833-01 s4011-04 s5493-01 s5627-01 S6931 10 ns 100 ns 1 s 10 s 100 s 1 ms 10 2 10 3 10 4 10 5 load resistance ( ? ) rise time (typ. ta=25 ? c, v r =0 v) S6931 s4011-04 s2833-01 s4797-01 s5627-01 s5493-01 100 k ? 1 m ? 10 m ? 100 m ? 1 g ? 10 t ? - 20 0 20 40 60 ambient temperature ( ? c) shunt resistance 80 10 g ? 100 g ? 1 t ? s2833-01 s4011-04 s4797-01 S6931 s5627-01 s5493-01 (typ. v r =10 mv) rise time vs. load resistance kspdb0129eb kspdb0130ec kspdb0131eb kspdb0132eb spectral response dark current vs. reverse voltage shunt resistance temperature characteristics 2
si photodiode s5493-01, etc. 4.1 0.2 (including burr) 4.0 * 5.2 0.2 0.25 10 ? 7.5 5 ? 4.5 0.4 5.0 0.2 (including burr) 4.7 * 10 ? 4.8 * 2.54 0.5 0.6 5 ? 1.8 0.8 0.4 5 ? nc cathode anode cathode photosensitive surface chip position accuracy with respect to the package dimensions marked * x, y 0.2 2 ? nc cathode anode cathode 4.6 0.2 (including burr) 4.5 * 5.0 0.4 5.0 0.4 (1.0) (1.0) 14.5 0.3 (0.8) 0.7 0.5 5.6 0.2 (including burr) 0.3 max. 0.3 max. 5 ? 1.0 0.25 2.0 3 ? 5.4 * 10 ? 5.5 * 3 ? 2.54 (0.8) 0.6 photosensitive surface chip position accuracy with respect to the package dimensions marked * x, y 0.2 2 ? ? S6931 ? s4797-01 ? s5493-01 ? s5627-01 dimensional outlines (unit: mm, tolerance unless otherwise noted: 0.1 mm) 4.6 0.2 (including burr) 4.5 * 5.6 0.2 (including burr) 5.4 * 10 ? 3 ? 5.5 * photosensitive surface 0.6 1.0 2.0 cathode sub anode sub (short lead) 5 ? 5.75 0.2 3 ? chip position accuracy with respect to the package dimensions marked * x, y 0.2 2 ? sub terminal should be open-circuited at use. 2.54 0.5 0.7 0.25 7.5 5 ? 4.5 0.4 1.0 0.4 ( pin lead) kspda0118ea kspda0119ea kspda0121ea kspda0122ea 0.25 7.5 5 ? 4.5 0.4 2.54 0.5 0.6 4.1 0.2 (including burr) 4.0 * 5.0 0.2 (including burr) 4.7 * 10 ? 5 ? 4.8 * 0.4 0.8 1.8 cathode sub anode sub (short lead) 10 ? 5.2 0.2 5 ? photosensitive surface chip position accuracy with respect to the package dimensions marked * x, y 0.2 2 ? sub terminal should be open-circuited at use. 1.6 0.4 ( pin lead) 3
si photodiode s5493-01, etc. hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, http://www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, t elephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?200 3 hamamatsu photonics k.k. nc cathode anode cathode 4.6 0.2 (including burr) 4.5 * 5.0 0.4 5.0 0.4 (1.0) (1.0) 14.5 0.3 (0.8) 0.7 0.5 5.6 0.2 (including burr) 0.3 max. 0.3 max. 5 ? 1.0 0.25 2.0 3 ? 5.4 * 10 ? 5.5 * 3 ? 2.54 (0.8) 0.7 photosensitive surface chip position accuracy with respect to the package dimensions marked * x, y 0.2 2 ? s2833-01 s4011-04 kspda0163ea kspda0123ea cat. no. kspd1025e02 dec. 2003 dn 4 5.0 0.2 (including burr) 4.7 * 10 ? 4.8 * 5 ? 0.5 0.6 2.54 1.5 0.4 1.5 0.4 1.8 0.8 10 ? 5 ? 7.0 0.3 0.7 0.3 0.7 0.3 0.25 0.1 0.1 photosensitive surface 4.0 * 4.1 0.2 (including burr) anode cathode nc cathode chip position accuracy with respect to the package dimensions marked * x, y 0.2 2 ?
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